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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 117-120

Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

(4) Camarda, M a La Magna, A a Severino, A a La Via, F a

a CNR IMM (Italy)

Author keywords

Step bunching; Step controlled epitaxy; Surface morphologies

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; SURFACE ANALYSIS; SURFACE MORPHOLOGY;

GROWTH CONDITIONS; HOMOEPITAXIAL GROWTH; LITERATURE DATA; MIS-ORIENTATION; POLYTYPES; STEP BUNCHING; STEP-CONTROLLED EPITAXY; SURFACE INSTABILITY;

SILICON CARBIDE;

EID: 62549119579 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.117 Document Type: Conference Paper

Times cited : (2)

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