A high-efficiency GaN HEMT hybrid class-E power amplifier for 3.5 GHz WiMAX applications

Proceedings of the 38th European Microwave Conference, EuMC 2008

Volumn , Issue , 2008, Pages 436-439

  Lee, Mun Woo ^a   Lee, Yong Sub ^a   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; INTEROPERABILITY; MICROWAVES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

CLASS-E; CLASS-E POWER AMPLIFIERS; CONTINUOUS WAVES; DRAIN EFFICIENCIES; GAN-HEMT; HARMONIC COMPONENTS; HIGH EFFICIENCIES; HIGH OUTPUT POWER; MEASURED RESULTS; OUTPUT POWER; OUTPUT POWER LEVELS; PACKAGED DEVICES; PARASITIC COMPONENTS; PEAK POWER; TRANSMISSION LINES;

GALLIUM NITRIDE;

EID: 62349091413     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2008.4751482     Document Type: Conference Paper

References (12)

1. H. Kobayashi, J. M. Hinrichi, and P. M. Asbeck, "Current-Mode Class-D Power Amplifiers for High-Efficiency RF Applications," IEEE Trans. Microwave Theory & Tech., vol. 49, no. 12, pp. 2480-2485, Dec. 2001.
2. W. Gerhard and R. Knoechel, "Differentially Coupled Outphasing WCDMA Transmitter with Inverse Class F Power Amplifiers," in IEEE Radio and Wireless Symposium, 2006, pp. 355-358.
3. Y. Y. Woo, Y. Yang, I. Kim, and B. Kim, "Efficiency Comparison between Highly Efficient Class-F and Inverse Class-F Power Amplifiers," IEEE Micro. Mag., vol. 7, no. 3, pp. 100-110, Jun. 2007.
4. N. O. Sokal and A. D. Sokal, "Class E - A New Class of High-Efficiency Tuned Single-Ended Switching Power Amplifiers," IEEE Journal of Solid-State Circuits, vol. SC-10, no. 3, pp. 168-176, Jun. 1975.
5. S. D. Kee, I. Aoki, A. Hajimiri, and D. Rutlege, "The Class-E/F Family of ZVS Switching Amplifiers," IEEE Trans. Microwave Theory & Tech., vol. 51, no. 6, pp. 1677-1690, Jun. 2003.
6. Y. S. Lee and Y. H. Jeong, "A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications," IEEE Microwave and Wireless Components Letters, vol. 17, no. 8, pp. 622-624, Aug. 2007.
7. rd Eur. Microw. Conf., 2003, vol. 1, pp. 285-288.
8. C. H. Oxley and M. J. Uren, "Measurements of Unity Gain Cutoff Frequency and Saturation Velocity of a GaN HEMT transistor," in IEEE Trans. On Elec. Devices, vol. 52, no. 2, pp. 165-169, Feb. 2005.
9. N. Ui and S. Sano, "A 45% Drain Efficiency, -50dBc ACLR GaN HEMT Class-E Amplifier with DPD for W-CDMA Base Station," in IEEE MTT-S Int. Microwave Symposium Digest, 2006, pp. 718-721.
10. S. Gao, H. Xu, S. Heikman, U. K. Mishra, and, R. A. York, "Two-Stage Quasi-Class-E Power Amplifier in GaN HEMT Technology," IEEE Microwave and Wireless Components Letters, vol. 16, no. 1, pp. 28-30, Jan. 2006.
11. H. G. Bae, R. Negra, S. Boumaiza, and F. M. Gannouchi, "Highefficiency GaN class-E power amplifier with compact harmonicsuppression network," in Proc. Eur. Microw. Conf., 2007, pp. 1093-1096.
12. th Int. Symposium on Power Semiconductor Devices & IC's, 2006, pp. 1-4.