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Japanese Journal of Applied Physics

Volumn 47, Issue 10 PART 1, 2008, Pages 7983-7985

Phase transition behavior of Ge-Bi-Te thin films from an NaCl to rhombohedral structure

(3) Sun, Chang Woo a Lee, Jeong Yong a Kim, Yong Tae b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

Ge Bi Te; Phase change material; Transition mechanism; Transmission electron microscopy

Indexed keywords

BUOYANCY; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METASTABLE PHASES; PHASE CHANGE MATERIALS; SODIUM CHLORIDE; TELLURIUM COMPOUNDS; THIN FILMS;

CHALCOGENIDE THIN FILMS; CRYSTALLIZATION TENDENCIES; GE-BI-TE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; INTERMEDIATE STRUCTURES; METASTABLE STRUCTURES; MONOCLINIC LATTICES; MOTIVE FORCES; PHASE TRANSFORMATIONS; RHOMBOHEDRAL STRUCTURES; TRANSITION BEHAVIORS; TRANSITION MECHANISM;

PHASE TRANSITIONS;

EID: 62249172137 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.7983 Document Type: Article

Times cited : (1)

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