Blue-violet lasing of optically pumped GaN-based vertical cavity surface-emitting laser with dielectric distributed Bragg reflectors

Journal of Lightwave Technology

Volumn 27, Issue 1, 2009, Pages 55-59

  Zhang, Jiang Yong ^a,b   Cai, Li E ^a   Zhang, Bao Ping ^a   Li, Shui Qing ^c   Lin, Feng ^c   Shang, Jing Zhi ^a   Wang, Du Xiang ^c   Lin, Ke Chuang ^c   Yu, Jin Zhong ^a,b   Wang, Qi Ming ^a,b  

^a XIAMEN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c Xiamen Tungsten Co Ltd Technology Center   (China)

Author keywords

Dielectric distributed Bragg reflector (DBR); GaN; Laser lift off; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

BRAGG CELLS; DISTRIBUTED BRAGG REFLECTORS; GALLIUM NITRIDE; OPTICAL PUMPING; PUMPS; REFLECTION; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SURFACE EMITTING LASERS; TANTALUM;

DBR; DEGREE OF POLARIZATIONS; DIELECTRIC DISTRIBUTED BRAGG REFLECTOR (DBR); DIRECT DEPOSITIONS; EMISSION LINEWIDTHS; GAN; LASER ACTIONS; LASER LIFT-OFF; LASER LIFT-OFF TECHNIQUES; LASING ACTIONS; OPTICALLY PUMPED; POLISHING PROCESS; ROOM TEMPERATURES; SIMPLIFIED PROCEDURES; SUBSTRATE REMOVALS; THRESHOLD PUMPING ENERGY DENSITIES; VERTICAL CAVITY SURFACE-EMITTING LASER (VCSEL);

GALLIUM ALLOYS;

EID: 61649112991     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.928542     Document Type: Article

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