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Volumn 8, Issue 7, 2008, Pages 2484-2488

Equipment for low temperature steady-state growth of silicon from metallic solutions

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EID: 61549142439     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg800120q     Document Type: Article
Times cited : (14)

References (9)
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    • Edelman, F.; Chack, A.; Weil, R.; Beserman, R.; Khait, Yu L.; Werner, P.; Rech, B.; Roschek, T.; Carius, R.; Wagner, H.; Beyer, W. Structure of PECVD Si:H films for solar cell applications. Sol. Energy Mater. Sol. Cells 2003, 77, 125-143.
    • Edelman, F.; Chack, A.; Weil, R.; Beserman, R.; Khait, Yu L.; Werner, P.; Rech, B.; Roschek, T.; Carius, R.; Wagner, H.; Beyer, W. Structure of PECVD Si:H films for solar cell applications. Sol. Energy Mater. Sol. Cells 2003, 77, 125-143.
  • 2
    • 0001761088 scopus 로고    scopus 로고
    • Aluminium induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature
    • Nast, O.; Puzzer, T.; Koschier, L. M.; Sproul, A. B.; Wenham, S. R. Aluminium induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature. Appl. Phys. Lett. 1998, 73, 3214-3216.
    • (1998) Appl. Phys. Lett , vol.73 , pp. 3214-3216
    • Nast, O.1    Puzzer, T.2    Koschier, L.M.3    Sproul, A.B.4    Wenham, S.R.5
  • 3
    • 30344434990 scopus 로고    scopus 로고
    • Progress with polycrystalline silicon thin-film solar cells on glass at UNSW
    • Aberle, A. G. Progress with polycrystalline silicon thin-film solar cells on glass at UNSW. J. Cryst. Growth 2006, 287, 386-390.
    • (2006) J. Cryst. Growth , vol.287 , pp. 386-390
    • Aberle, A.G.1
  • 4
  • 5
    • 0024092272 scopus 로고
    • Gravity effect on dissolution and growth of silicon in the In-Si system
    • Sukegawa, T.; Kimura, M.; Tanaka, A. Gravity effect on dissolution and growth of silicon in the In-Si system. J. Cryst. Growth 1988, 92, 46-52.
    • (1988) J. Cryst. Growth , vol.92 , pp. 46-52
    • Sukegawa, T.1    Kimura, M.2    Tanaka, A.3
  • 6
    • 0346580973 scopus 로고    scopus 로고
    • Growth of poly-crystalline silicon thin films using the temperature difference method
    • Ossenbrink, H. A, Helm, P, Ehman, H, Eds, H.S. Stephens & Associates: Bedford, UK
    • Thomas, B.; Müller, G.; Wilde, P.-M.; Wawra, H. Growth of poly-crystalline silicon thin films using the temperature difference method. In Proceedings of the 14th European Photovoltaic Solar Energy-Conference; Ossenbrink, H. A.; Helm, P.; Ehman, H.; Eds.; H.S. Stephens & Associates: Bedford, UK, 1997; Vol. 2, pp 1483-1486.
    • (1997) Proceedings of the 14th European Photovoltaic Solar Energy-Conference , vol.2 , pp. 1483-1486
    • Thomas, B.1    Müller, G.2    Wilde, P.-M.3    Wawra, H.4
  • 8
    • 0027640943 scopus 로고
    • The role of hydrogen in silicon liquid phase epitaxy
    • Bergmann, R.; Kurianski, J. The role of hydrogen in silicon liquid phase epitaxy. Mater. Lett. 1993, 17, 137-140.
    • (1993) Mater. Lett , vol.17 , pp. 137-140
    • Bergmann, R.1    Kurianski, J.2
  • 9
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    • accessed January 31, 2007
    • Roth & Rau AG. http://www.roth-rau.de (accessed January 31, 2007).
    • Roth & Rau AG


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