Broadband antireflective structures applied to high resistive float zone silicon in the THz spectral range

Optics Express

Volumn 17, Issue 5, 2009, Pages 3063-3077

  Brückner, Claudia ^a,b   Käsebier, Thomas ^b   Pradarutti, Boris ^a   Riehemann, Stefan ^a   Notni, Günther ^a   Kley, Ernst Bernhard ^b   Tünnermann, Andreas ^a,b  

^a FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; SPECTROSCOPY; SPECTRUM ANALYSIS; TERAHERTZ SPECTROSCOPY;

ANTIREFLECTIVE STRUCTURE; ELECTRIC-FIELD AMPLITUDE; FABRICATION PROCESS; FLOAT ZONE SILICON; HEXAGONAL STRUCTURES; RECTANGULAR STRUCTURE; STRUCTURAL PARAMETER; THZ TIME DOMAIN SPECTROSCOPY;

STRUCTURAL OPTIMIZATION;

EID: 61549093648     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.003063     Document Type: Article

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