Linear electrooptic coefficient of InP nanowires

Nano Letters

Volumn 8, Issue 4, 2008, Pages 1020-1025

  Novotny, Clint J ^a   DeRose, Christopher T ^b   Norwood, Robert A ^b   Yu, Paul K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT MEASUREMENTS; ELECTRO-OPTIC DEVICES; FABRICATION PROCEDURES; FIGURE OF MERITS; GLASS SUBSTRATES; GROWTH SUBSTRATES; HOST POLYMERS; INP; LINEAR ELECTRO-OPTIC COEFFICIENTS; LITHIUM NIOBATE; ORDERS OF MAGNITUDES; SEMICONDUCTING NANOWIRES; VERTICALLY ALIGNED;

ELECTRIC WIRE; NANOWIRES; NIOBIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ELECTROOPTICAL DEVICES;

EID: 61449211041     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl072688k     Document Type: Article

References (33)

1. Wong, E. W.; Sheehan, P. E.; Lieber, C. M. Science 1997, 277, 1971.
2. Wu, B.; Heidelberg, A.; Boland, J. J. Nat. Mater. 2005, 4, 525.
3. Wu, Y.; Yang, P. Adv. Mater. 2001, 13, 520.
4. Chung, S. W.; Yu, J. Y.; Heath, J. R. Appl. Phys. Lett. 2000, 76, 2068.
5. Duan, X.; Huang, Y.; Cui, Y.; Wang, J.; Lieber, C. M. Nature 2001, 409, 66.
6. Zhong, Z.; Qian, F.; Wang, D.; Lieber, C. M. Nano. Lett. 2003, 3, 343.
7. Johnson, J. C; Yan, H.; Yang, P.; Saykally, R. J. J. Phys. Chem. B 2003, 107, 8816.
8. Johnson, J. C.; Choi, H. J.; Knutsen, K. P.; Schaller, R. D.; Yang, P.; Saykally, R. J. Nat. Mater. 2002, 1, 106.
9. Li, D.; Wu, Y.; Kim, P.; Shi, L.; Yang, P.; Majumdar, A. Appl. Phys. Lett. 2003, 83, 2934.
10. Beck, G.; Petrikowski, K.; Khan, H. R. Proceedings of the Microstructure Analysis in Materials Science, Freiberg, June 15-17, 2005.
11. Sokolov, A.; Sabirianov, I. F.; Tsymbal, E. Y.; Doudin, B.; Li, X. Z. J. Appl. Phys. 2003, 93, 7029.
12. Schildkraut, J. S. Appl. Opt. 1990, 29, 2839.
13. Chollet, P. A.; Gadret, G.; Kajzar, F.; Raimond, P. Thin Solid Films 1994, 242, 132.
14. Teng, C. C.; Man, H. T. Appl. Phys. Lett. 1990, 56, 1734.
15. Adachi, S. Handbook on Physical Properties of Semiconductors; Kluwer Academic Publishers: Boston, 2004.
16. Yariv, A. Quantum Electronics; Wiley and Sons: New York, 1989.
17. Khanarian, G.; Sounik, J.; Allen, D.; Shu, S. F.; Walton, C.; Goldberg, H.; Stamatoff, J. B. J. Opt. Soc. Am. B 1996, 13, 1927.
18. Landau, L. D.; Lifshitz, E. M. Electrodynamics of Continuous Media; Pergamon Press: Oxford, NY, 1980.
19. Enami, Y.; DeRose, C. T.; Mathine, D.; Loychik, C; Greenlee, C; Norwood, R. A.; Kim, T. D.; Luo, J.; Tian, Y.; Jen, A. K. Y.; Peyghambarian, N. Nat. Photonics 2007, 1, 180.
20. Shi, Y.; Lin, W.; Olsen, D. J.; Bechtel, J. H.; Zhang, H.; Steier, W. H.; Zhang, C; Dalton, L. R. Appl. Phys. Lett. 2000, 77, 1.
21. Novotny, C. J.; Yu, P. K. L. Appl. Phys. Lett. 2005, 87, 203111.
22. Pearsall, T. P. Properties, Processing and Applications of Indium Phosphide; INSPEC, the Institution of Electrical Engineers: London, 2000.
23. Tuck, B.; Baker, A. J. J. Mater. Sci. 1973, 8, 1559.
24. Suzuki, N.; Tada, K Jpn. J. Appl. Phys 1984, 23, 291.
25. Holmes, R. J.; Kim, Y. S.; Brandle, C. D.; Smyth, D. M. Ferroelectrics 1983, 51, 41.
26. Boyd, G. D.; Bond, W. L.; Cater, H. L. J. Appl. Phys. 1967, 38, 1941.
27. Tay, S.; Thomas, J.; Momeni, B.; Askari, M.; Adibi, A.; Hotchkiss, P. J.; Jones, S. C; Marder, S. R.; Norwood, R. A.; N. Peyghambarian, N Appl. Phys. Lett. 2007, 91, 221109.
28. Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292, 1897.
29. Kayanuma, Y. Phys. Rev. B 1988, 38, 9797.
30. Ghosh, S.; Lenihan, A. S.; Dutt, M. V. G.; Qasaimeh, O.; Steel, D. G.; Bhattacharya, P. J. Vac. Sci. Technol. B 2001, 19, 1455.
31. Zhang, F.; Zhang, L.; Wang, Y. X.; Claus, R. Appl. Opt. 2005, 44, 3969.
32. Wu, X.; Wang, R.; Zou, B.; Wu, P.; Wang, L.; Xu, J Appl. Phys. Lett. 1997, 71, 2097.
33. Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. Science 2001, 293, 1455.