Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Dormaier, R ^a   Zhang, Q ^a   Liu, B ^a   Chou, Y C ^b   Lange, M D ^b   Yang, J M ^b   Oki, A K ^b   Mohney, S E ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRON MOBILITY; ELECTRONS; HETEROJUNCTIONS; INDIUM ARSENIDE; OHMIC CONTACTS; PALLADIUM; PLATINUM; THERMODYNAMIC STABILITY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON CHANNELS; HETEROSTRUCTURE; HETEROSTRUCTURES; HIGH ELECTRON MOBILITIES; INAS; INTERFACIAL REACTIONS; RESISTANCE INCREASE; THERMAL STABILITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 61449200425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068378     Document Type: Article

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