Temperature and excitation power dependence of photoluminescence from high quality GaSb grown on AlSb and GaSb buffer layers

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Park, J H ^a   Lee, T K ^a   Noh, Y K ^a   Kim, M D ^a   Oh, Eunsoon ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CRYSTAL GROWTH; PHOTOLUMINESCENCE;

ACCEPTOR-BOUND EXCITONS; DONOR-ACCEPTOR PAIR TRANSITIONS; EXCITATION POWER; EXCITATION POWER DEPENDENCES; GAAS SUBSTRATES; HIGH QUALITIES; MOLECULAR-BEAM EPITAXIES; PHOTOLUMINESCENCE INTENSITIES; SEMI-INSULATING;

GALLIUM ALLOYS;

EID: 61449193351     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082009     Document Type: Article

References (23)

1. A. Sasaki, M. Nishiuma, and Y. Takeda, Jpn. J. Appl. Phys. 0021-4922 10.1143/JJAP.19.1695 19, 1695 (1980).
2. T. H. Chiu, J. L. Zyskind, and W. T. Tsang, J. Electron. Mater. 0361-5235 10.1007/BF02667791 16, 57 (1987).
3. M. J. Cherng, G. B. Stringfellow, D. W. Kisker, A. K. Srivastava, and J. L. Zyskind, Appl. Phys. Lett. 0003-6951 10.1063/1.96517 48, 419 (1986).
4. P. S. Dutta, H. K. Bhat, and V. Kumar, J. Appl. Phys. 0021-8979 10.1063/1.365356 81, 5821 (1997).
5. M. -C. Wu and C. -C. Chen, J. Appl. Phys. 0021-8979 10.1063/1.352216 72, 4275 (1992).
6. W. -J. Jiang, Y. -M. Sun, and M. -C. Wu, J. Appl. Phys. 0021-8979 10.1063/1.359576 77, 1725 (1995).
7. M. -C. Wu, C. -W. Chen, and C. -C. Chen, J. Appl. Phys. 0021-8979 10.1063/1.351786 72, 1101 (1992).
8. M. -C. Wu and C. -C. Chen, J. Appl. Phys. 0021-8979 10.1063/1.354085 73, 8495 (1993).
9. S. C. Chen and Y. K. Su, J. Appl. Phys. 0021-8979 10.1063/1.343880 66, 350 (1989).
10. M. Lee, D. J. Nicholas, K. E. Singer, and B. Hamilton, J. Appl. Phys. 0021-8979 10.1063/1.336948 59, 2895 (1986).
11. Y. K. Noh, Y. J. Hwang, and M. D. Kim, J. Korean Phys. Soc. 50, 1929 (2007).
12. Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, and J. E. Oh, Appl. Phys. Lett. 0003-6951 10.1063/1.2747674 90, 241915 (2007).
13. K. Akahane, N. Yamamoto, S. -I. Gozu, and N. Ohtani, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2003.12.041 264, 21 (2004).
14. G. Balakrishnan, S. Huang, L. R. Dawson, Y. -C. Xin, P. Conlin, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 10.1063/1.1850611 86, 034105 (2005).
15. L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, Appl. Phys. Lett. 0003-6951 10.1063/1.1353818 78, 1418 (2001).
16. L. Müller-Kirsch, R. Heitz, U. W. Pohl, and D. Bimberg, Appl. Phys. Lett. 0003-6951 10.1063/1.1394715 79, 1027 (2001).
17. S. M. Chen and Y. K. Su, J. Appl. Phys. 0021-8979 10.1063/1.354643 74, 2892 (1993).
18. C. Ghezzi, R. Magnanini, A. Parisini, B. Rotelli, and L. Tarricone, Phys. Rev. B 0163-1829 10.1103/PhysRevB.52.1463 52, 1463 (1995).
19. M. Cardona, T. A. Meyer, and M. L. W. Thewalt, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.196403 92, 196403 (2004).
20. B. Hu, A. Yin, G. Karczewski, H. Luo, S. W. Short, N. Samarth, M. Dobrowolska, and J. K. Furdyna, J. Appl. Phys. 0021-8979 10.1063/1.354418 74, 4153 (1993).
21. E. Oh, H. Park, and Y. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.120647 72, 70 (1998).
22. E. Oh, D. G. Choi, J. H. Park, T. K. Lee, S. Lee, and J. K. Furdyna, J. Korean Phys. Soc. 53, 106 (2008).
23. C. Klingshirn, J. Fallert, O. Gogolin, M. Wissinger, R. Hauschild, M. Hauser, H. Kalt, and H. Zhou, Proceeding of the 13th International Conference on II-VI Compounds," Jeju, Korea, (2007) p. 137.