High etching rates of bulk Nb in Ar/ Cl2 microwave discharge

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 2, 2009, Pages 301-305

  Raskovic M ^a   Popovic S ^a   Upadhyay, J ^a   Vuskovic L ^a   Phillips, L ^b   Valente Feliciano, A M ^b  

^a OLD DOMINION UNIVERSITY   (United States)

^b THOMAS JEFFERSON NATIONAL ACCELERATOR FACILITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY QUALITY FACTORS; CAVITY QUANTUM ELECTRODYNAMICS; CONCENTRATION OF; DAMAGED SURFACES; ETCHING RATES; INPUT POWER; JOSEPHSON JUNCTIONS; MICROWAVE DISCHARGES; PENETRATION DEPTHS; PLASMA CONDITIONS; PLASMA EMISSION SPECTROSCOPIES; PLASMA PARAMETERS; REACTIVE GAS; SURFACE IMPERFECTIONS;

ATOMIC SPECTROSCOPY; ELECTRODYNAMICS; EMISSION SPECTROSCOPY; GLOW DISCHARGES; MICROWAVES; MOLECULAR SPECTROSCOPY; NIOBIUM; PLASMA ETCHING; QUANTUM ELECTRONICS; SURFACE TREATMENT;

PLASMAS;

EID: 61449176111     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3077298     Document Type: Article

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