A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 376-382

  Esposito, A ^a   Luisier, M ^b   Frey, M ^a   Schenk, A ^a  

^a ETH ZURICH   (Switzerland)

^b Purdue University   (United States)

Author keywords

Ballistic transport; Nonparabolicity; Quantum wires; Tight binding

Indexed keywords

BALLISTICS; INDIUM COMPOUNDS; NANOWIRES; SEMICONDUCTOR QUANTUM WIRES; TERBIUM ALLOYS; THREE DIMENSIONAL; TRANSISTORS; TRANSPORT PROPERTIES; WIRE;

BALLISTIC REGIMES; BALLISTIC TRANSPORT; BANDSTRUCTURE; BANDSTRUCTURES; EFFECTIVE MASS APPROXIMATIONS; FULL BANDS; NONPARABOLICITY; QUANTUM WIRE TRANSISTORS; QUANTUM WIRES; TIGHT-BINDING; TIME EFFICIENCIES; TRANSFER CHARACTERISTICS; WIRE WIDTHS;

QUANTUM CHEMISTRY;

EID: 61349187605     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.01.012     Document Type: Article

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