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Volumn 311, Issue 5, 2009, Pages 1245-1249
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Crystallization from amorphous structure to hexagonal quantum dots induced by an electron beam on CdTe thin films
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Author keywords
A1. Crystal morphology; A1. Nanostructures; A1. X ray diffractions; B2. Semiconducting II VI materials
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Indexed keywords
CADMIUM;
CADMIUM ALLOYS;
CADMIUM COMPOUNDS;
CHEMICAL VAPOR DEPOSITION;
CRYSTALLIZATION;
DIFFRACTION;
ELECTRON BEAMS;
FILM PREPARATION;
METASTABLE PHASES;
MORPHOLOGY;
NANOSTRUCTURES;
SEMICONDUCTING BISMUTH COMPOUNDS;
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTOR QUANTUM DOTS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
ZINC SULFIDE;
A1. CRYSTAL MORPHOLOGY;
A1. NANOSTRUCTURES;
A1. X-RAY DIFFRACTIONS;
AMORPHOUS STRUCTURES;
AVERAGE GRAIN SIZES;
B2. SEMICONDUCTING II-VI MATERIALS;
BROAD BANDS;
CDTE;
CDTE QUANTUM-DOTS;
CRYSTALLINE LATTICES;
DEPOSITION TIME;
ENERGY BAND GAPS;
GLASS SUBSTRATES;
HEXAGONAL STRUCTURES;
LITERATURE DATUM;
METASTABLE STRUCTURES;
QUANTUM DOTS;
R F SPUTTERING;
ROOM TEMPERATURES;
SOFTWARE ANALYSIS;
TEM;
UNIT-CELL VOLUMES;
WURTZITE;
WURTZITE STRUCTURES;
X-RAY DIFFRACTION PATTERNS;
XRD;
AMORPHOUS FILMS;
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EID: 61349148692
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.12.056 Document Type: Article |
Times cited : (13)
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References (27)
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