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Volumn 96, Issue 6, 2004, Pages 3193-3198

In situ transmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPACT DISKS; CRYSTAL STRUCTURE; CRYSTALLIZATION; DATA REDUCTION; DOPING (ADDITIVES); ELECTRON BEAMS; HEATING; IRRADIATION; MORPHOLOGY; OPTICAL RECORDING; QUENCHING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 4944222322     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775297     Document Type: Article
Times cited : (25)

References (18)
  • 16
    • 4944239989 scopus 로고    scopus 로고
    • note
    • We observed in many TEM experiments that crystal growth started in the lower right corner of the amorphous-crystalline interface due to an inhomogeneous current density of the electron beam.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.