Tuning the inherent magnetoresistance of InSb thin films

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Zhang, Tong ^a   Harris, J J ^a   Branford, W R ^a   Bugoslavsky, Y V ^a   Clowes, S K ^a   Cohen, L F ^a   Husmann, A ^b   Solin, S A ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

^c WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY BANDS; INSB/GAAS INTERFACE; MOBILITY TENSOR; UNDOPED INSB EPILAYERS;

EPITAXIAL GROWTH; FERMI LEVEL; INTERFACES (MATERIALS); MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; TENSORS; TUNING;

THIN FILMS;

EID: 33645518237     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162666     Document Type: Article

References (20)

1. J. Heremans, D. L. Partin, M. Thrush, and L. Green, Semicond. Sci. Technol. 8, S424 (1993).
2. C. Herring, J. Appl. Phys. 31, 1939 (1960).
3. Y. M. Strelniker and D. J. Bergman, Phys. Rev. B 67, 184416 (2003).
4. S. A. Solin, T. Thio, D. R. Hines, and J. J. Heremans, Science 289, 1530 (2000).
5. S. A. Solin, D. R. Hines, A. C. H. Rowe, J. S. Tsai, Y. A. Pashkin, S. J. Chung, N. Goel, and M. B. Santos, Appl. Phys. Lett. 80, 4012 (2002).
6. W. R. Branford, A. Husmann, S. A. Solin, S. K. Clowes, T. Zhang, Y. V. Bugoslavsky, and L. F. Cohen, Appl. Phys. Lett. 86, 202116 (2005).
7. M. M. Parish and P. B. Littlewood, Nature (London) 426, 162 (2003).
8. Y. K. Yeo, R. L. Hengehold, and D. W. Elsaesser, J. Appl. Phys. 61, 5070 (1987).
9. R. L. Petritz, Phys. Rev. 110, 1254 (1958).
10. M. J. Kane, N. Apsley, D. A. Anderson, L. L. Taylor, and T. Kerr, J. Phys. C 18, 5629 (1985).
11. D. A. Syphers, K. P. Martin, and R. J. Higgins, Appl. Phys. Lett. 49, 534 (1986).
12. Z.-M. Li, S. P. McAlister, and C. M. Hurd, J. Appl. Phys. 66, 1500 (1989).
13. B. Arnaudov, I. T. Paskova, S. Evtimova, I. E. Valcheva, M. Heuken, and B. Monemar, Phys. Rev. B 67, 045314 (2003).
14. T. Zhang, S. K. Clowes, M. Debnath, A. Bennett, C. Roberts, J. J. Harris, R. A. Stradling, L. F. Cohen, T. Lyford, and P. F. Fewster, Appl. Phys. Lett. 84, 4463 (2004).
15. T. Zhang, M. Debnath, S. K. Clowes, W. Branford, A. Bennett, C. Roberts, L. F. Cohen, and R. A. Stradling, Physica E (Amsterdam) 20, 216 (2004).
16. J. J. Harris, T. Zhang, W. R. Branford, S. K. Clowes, M. Debnath, A. Bennett, C. Roberts, and L. F. Cohen, Semicond. Sci. Technol. 19, 1406 (2004).
17. S. Ishida, Physica E (Amsterdam) 18, 294 (2003).
18. J. R. Sites and A. K. Nedoluha, Phys. Rev. B 24, 4309 (1981).
19. K. Suga, K. Kindo, S. Ishida, A. Okamoto, and I. Shibasaki, Physica B 346, 470 (2004).
20. S. D. Parker, R. L. Williams, R. Droopad, R. A. Stradling, K. W. J. Barnham, S. N. Holmes, J. Laverty, C. C. Philips, E. Skuras, R. Thomas, X. Zhang, A. Staton-Bevan, and D. W. Pashley, Semicond. Sci. Technol. 4, 663 (1989).