Molecular dynamics simulations to explore the effect of chemical bonding in the keV bombardment of Si with C60, Ne60 and 12Ne60 projectiles

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 4, 2009, Pages 652-655

  Krantzman, K D ^a   Garrison, B J ^b  

^a Department of Teacher Education and Department of Sociology and Anthropology   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

C60; MEDF; Molecular dynamics; Silicon

Indexed keywords

ATOMS; BOND STRENGTH (CHEMICAL); DEPTH PROFILING; KINETIC ENERGY; MOLECULAR DYNAMICS; NEON; PROJECTILES; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES;

C ATOMS; C60; EFFECT OF CHEMICALS; ENERGY DEPOSITIONS; MEDF; MESO-SCALE; MOLECULAR DYNAMICS SIMULATIONS; NORMAL INCIDENCES; SECONDARY IONS; SI ATOMS; VERTICAL DISTRIBUTIONS;

DYNAMICS;

EID: 61349126456     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.11.055     Document Type: Article

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