Electronic properties of a carbon nanotube in a field-effect transistor structure: A first-principles study

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 8, 2009, Pages

  Uchida, Kazuyuki ^a,b   Okada, Susumu ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 60949088515     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.085402     Document Type: Article

References (27)

1. S. Iijima, Nature (London) 354, 56 (1991). 10.1038/354056a0
2. N. Hamada, S. I. Sawada, and A. Oshiyama, Phys. Rev. Lett. 68, 1579 (1992). 10.1103/PhysRevLett.68.1579
3. R. Saito, M. Fujita, G. Dresselhaus, and M. D. Dresselhaus, Appl. Phys. Lett. 60, 2204 (1992). 10.1063/1.107080
4. S. Okada and A. Oshiyama, J. Phys. Soc. Jpn. 72, 1510 (2003). 10.1143/JPSJ.72.1510
5. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998). 10.1038/29954
6. Y. Ohno, S. Iwatsuki, T. Hiraka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 42, 4116 (2003). 10.1143/JJAP.42.4116
7. H. Shimotani, T. Kanbara, Y. Iwasa, K. Tsukagoshi, Y. Aoyagi, and H. Kataura, Appl. Phys. Lett. 88, 073104 (2006). 10.1063/1.2173626
8. S. Ilani, L. A. K. Donev, M. Kindermann, and P. L. McEuen, Nat. Phys. 2, 687 (2006). 10.1038/nphys412
9. D. L. John, L. C. Castro, and D. L. Pulfrey, J. Appl. Phys. 96, 5180 (2004). 10.1063/1.1803614
10. J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002). 10.1063/1.1502188
11. P. Pomorski, L. Pastewka, C. Roland, H. Guo, and J. Wang, Phys. Rev. B 69, 115418 (2004). 10.1103/PhysRevB.69.115418
12. L. Latessa, A. Pecchia, A. Di Carlo, and P. Lugli, Phys. Rev. B 72, 035455 (2005). 10.1103/PhysRevB.72.035455
13. K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama, Phys. Rev. B 76, 155436 (2007). 10.1103/PhysRevB.76.155436
14. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980). 10.1103/PhysRevLett.45.566
15. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
16. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964). 10.1103/PhysRev.136.B864
17. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990). 10.1103/PhysRevB.41.7892
18. W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). 10.1103/PhysRev.140.A1133
19. Tokyo Ab initio Program Package (TAPP) is developed by a consortium initiated at University of Tokyo
20. J. Yamauchi, M. Tsukada, S. Watanabe, and O. Sugino, Phys. Rev. B 54, 5586 (1996) 10.1103/PhysRevB.54.5586
21. O. Sugino and A. Oshiyama, Phys. Rev. Lett. 68, 1858 (1992). 10.1103/PhysRevLett.68.1858
22. In general, the shape of the DOS spectrum can be changed by the charge accumulation, accompanied by large structural deformations induced by the charging (Ref.), band modifications under extremely large electric fields (Ref.), or some exchange-correlation effect.
23. K. Uchida, S. Tsuneyuki, and T. Schimizu, Phys. Rev. B 68, 174107 (2003). 10.1103/PhysRevB.68.174107
24. J. O'Keeffe, C. Wei, and K. Cho, Appl. Phys. Lett. 80, 676 (2002). 10.1063/1.1432441
25. M. Büttiker, J. Phys.: Condens. Matter 5, 9361 (1993). As we assume that the gate electrode has an infinite DOS value in the present work, the DOS of the gate electrode does not contribute to the total capacitance of the system. See also (Ref.). 10.1088/0953-8984/5/50/017
26. L. X. Benedict, S. G. Louie, and M. L. Cohen, Phys. Rev. B 52, 8541 (1995). 10.1103/PhysRevB.52.8541
27. The magnitude of the contribution to Δ ρ-Q (r) from each band was measured by zΔ ρ -Q n (r) dr, where Δ ρ -Q n (r) is the change in the charge density of the nth band induced by the charging.