SCOPUS 정보 검색 플랫폼

International Journal of High Speed Electronics and Systems

Volumn 18, Issue 4, 2008, Pages 1045-1054

Microbolometers fabricated with surface micromachining with a-Si-Ge: H thermo-sensing films

(4) Moreno, Mario a Kosarev, Andrey a Torres, Alfonso a Ambrosio, Roberto b

a Institute National of Astrophysics Optics and Electronics (Mexico)

b UNIVERSIDAD AUTÓNOMA DE CIUDAD JUÁREZ (Mexico)

Author keywords

Germanium; IR detectors; Plasma enhanced chemical vapor deposition

Indexed keywords

A-SI:H; CELL RESISTANCES; DEVICE CONFIGURATIONS; HIGH TEMPERATURE COEFFICIENTS; IR DETECTORS; LOW TEMPERATURES; MICRO-BOLOMETERS; MICRO-MACHINING; PERFORMANCE CHARACTERISTICS; PROCESS FLOWS; RESPONSIVITY; SENSING FILMS; SILICON SUBSTRATES; UN-COOLED IR;

BOLOMETERS; DETECTORS; ELECTRIC REACTORS; FABRICATION; GERMANIUM; INFRARED DETECTORS; MACHINING; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON DETECTORS; SURFACE MICROMACHINING; THERMAL CONDUCTIVITY OF SOLIDS; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 60849129148 PISSN: 01291564 EISSN: None Source Type: Journal
DOI: 10.1142/S0129156408005990 Document Type: Article

Times cited : (9)

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