Present and future prospects of GaN-based power electronics

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 1078-1081

  Ueda, Daisuke ^b   Hikita, Masahiro ^a   Nakazawa, Satoshi ^a   Nakazawa, Kazushi ^a   Ishida, Hidetoshi ^a   Yanagihara, Manabu ^a   Inoue, Kaoru ^a   Ueda, Tetsuzo ^a   Uemoto, Yasuhiro ^a   Tanaka, Tsuyoshi ^a   Egawa, Takashi ^c  

^a Semiconductor Device Research Center   (Japan)

^b Adavanced Technology Research Laboratories

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE TECHNOLOGIES; ENHANCEMENT MODES; FUTURE PROSPECTS; GAN ON SILICONS; MINORITY-CARRIER INJECTIONS; ON RESISTANCES; QUATERNARY ALLOYS; SUPER LATTICES;

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MESFET DEVICES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; TECHNOLOGY;

EPITAXIAL GROWTH;

EID: 60649104695     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734738     Document Type: Conference Paper

References (7)

1. T. Murata, et al, "extended Abstract SSDM 2004, pp.260-261
2. S. Nakazawa, et al, Extended Abstract TWHM 2005, pp.98-99
3. S.Yoshida, et al, "Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with Dual Schottky Structure", IEICE Trans. Electronics V0l.E88-C, No.4, pp.690-693, 2005
4. Yoshida, et al, "A New GaN Based Field Effect Schottky Barrier Diode with a Very Low On-Voltage", Proc. on ISPSD 04, pp.323-326, 2004
5. H. Ishikawa et al, JJAP vol.38, Part2 No.5A, L492494, 1999
6. M. Hikita, et al, IEDM Tech. Dig., pp.803-806, 2004
7. M. Kuroda, et al. "Normally-off Operation of Non-polar AlGaN/GaN HFETs Grown on R-plane Sapphire", Ex, Abs. SSDM 2005, pp.470-471