Low-power carry look-ahead adder with multi-threshold voltage CMOS technology

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 2160-2163

  Kim, Dong Whee ^a   Kim, Jeong Beom ^b  

^a Samsung SDI   (South Korea)

^b Kangwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRY LOOK-AHEAD ADDERS; CMOS CIRCUITS; CMOS PROCESS; CRITICAL PATHS; HIGH-THRESHOLD VOLTAGES; HSPICE SIMULATIONS; LOW-POWER; LOW-THRESHOLD VOLTAGE TRANSISTORS; MULTI-THRESHOLD CMOS; MULTI-THRESHOLD VOLTAGE CMOS; POWER CONSUMPTION; PROPAGATION DELAY TIME; SAMSUNG; SHORTEST PATHS;

ADDERS; CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; GATES (TRANSISTOR); INTEGRATED CIRCUITS; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

TECHNOLOGY;

EID: 60649084049     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734996     Document Type: Conference Paper

References (8)

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