Tailoring the electrical properties of inverse silicon opals - A step towards optically amplified silicon solar cells

Advanced Materials

Volumn 21, Issue 5, 2009, Pages 559-563

  Suezaki, Takashi ^a,b   O'Brien, Paul C ^a   Chen, Jennifer I L ^a   Loso, Edward ^a   Kherani, Nazir P ^a   Ozin, Geoffrey A ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b KANEKA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ETHANOL; HYDROGEN; NONMETALS; OPTICAL CONDUCTIVITY; OPTICAL CORRELATION; OPTICAL PROPERTIES; PASSIVATION; PLASMA DIAGNOSTICS; PLASMAS; SILICA; SILICATE MINERALS; VAPORS;

CHARGE TRANSPORTS; CHEMICAL VAPORS; CONCENTRATION OF; CRYSTALLINITY; DEPOSITION CONDITIONS; ELECTRICAL CONDUCTIVITIES; ELECTRICAL PROPERTIES; MATERIAL PROPERTIES; OPAL FILMS; OPAL TEMPLATES; PHOTONIC-CRYSTAL; PLASMA PASSIVATIONS; SAPPHIRE SUBSTRATES; SELF- ASSEMBLIES; STRUCTURAL QUALITIES;

SILICON;

EID: 60349097879     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200802123     Document Type: Article

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