Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 290-293

  Fet, A ^a   Haublein V ^a   Bauer, A J ^a   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DYSPROSIUM; ION BOMBARDMENT; ION IMPLANTATION; IONS; LANTHANUM; PROBABILITY DENSITY FUNCTION; RARE EARTH ELEMENTS; SEMICONDUCTOR MATERIALS; THRESHOLD VOLTAGE; WORK FUNCTION;

EFFECTIVE WORK FUNCTIONS; FERMI-LEVEL PINNING; FLAT-BAND VOLTAGE SHIFTS; FLAT-BAND VOLTAGES; GATE ELECTRODES; GATE STACKS; HIGH - K DIELECTRICS; IMPLANTATION DOSE; LANTHANIDE; LANTHANIDE IONS; METAL-OXIDE SEMICONDUCTORS;

LOGIC GATES;

EID: 59949102229     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021043     Document Type: Article

References (11)

1. C. C. Hobbs, IEEE Trans. Electron Devices 51, 971 (2004).
2. C. C. Hobbs, IEEE Trans. Electron Devices 51, 978 (2004).
3. Hyung-Suk Jung, Dig. Tech. Pap.-Symp. VLSI Technol. 2005, 232.
4. H. N. Alshareef, Appl. Phys. Lett. 89, 232103 (2006).
5. H.-J. Cho, Proceedings of the ICICDT '07, 30 May-1 June 2007 (unpublished), pp. 1-3.
6. H.-C. Wen, Proceedings of the IEEE Symposium on VLSI Technology, 12-14 June 2007 (unpublished), pp. 160-161.
7. S. C. Song, Tech. Dig.-Int. Electron Devices Meet. 2007, 337.
8. J. A. Kittl, Microelectron. Eng. 84, 1857 (2007).
9. P. Sivasubramani, Proceedings of the IEEE Symposium on VLSI Technology, 12-14 June 2007 (unpublished), pp. 68-69.
10. SRIM, http://www.srim.org/.
11. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998).