Characterization of an AlOx tunneling barrier in a magnetic tunnel junction by a surface plasmon resonance spectroscopy technique

IEEE Transactions on Magnetics

Volumn 45, Issue 1, 2009, Pages 60-63

  Kim, Ki Woong ^a   Koo, Ja Hyun ^a   Shin, Il Jae ^a   Kwak, June Sik ^a   Hong, Jin Pyo ^a   Woo, Seok Jong ^b  

^a Hanyang University   (South Korea)

^b Development Team 2   (South Korea)

Author keywords

Magnetic random access memory; Magnetoresistance; Temperature measurement; Tunneling

Indexed keywords

ELECTRON TUNNELING; MAGNETIC STORAGE; MAGNETORESISTANCE; PLASMONS; QUALITY CONTROL; RANDOM ACCESS STORAGE; TEMPERATURE MEASUREMENT; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

ANTIPARALLEL STATE; DIELECTRIC FUNCTIONS; JUNCTION RESISTANCES; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION; SURFACE PLASMON RESONANCE SPECTROSCOPY; TEMPERATURE DEPENDENT BEHAVIOR; TUNNELING MAGNETORESISTANCE;

SURFACE PLASMON RESONANCE;

EID: 59849118680     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2006570     Document Type: Article

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