Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration

Journal of Electronic Materials

Volumn 38, Issue 3, 2009, Pages 438-442

  Ferdousi, F ^a   Sarkar, J ^a   Tang, S ^a   Shahrjerdi, D ^a   Akyol, T ^a   Tutuc, E ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

High k dielectric; Nanocrystal memory devices; Protein assembly; Vertical structure

Indexed keywords

BARRIER HEIGHTS; CELL DENSITIES; FLASH MEMORY DEVICES; FLOATING GATES; HIGH PERMITTIVITIES; HIGH-K DIELECTRIC; NANOCRYSTAL MEMORY DEVICES; PBSE NANOCRYSTALS; POWER CONSUMPTION; PROTEIN ASSEMBLY; THRESHOLD VOLTAGE VARIATIONS; VERTICAL STRUCTURE;

ALUMINUM; FLASH MEMORY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS;

DATA STORAGE EQUIPMENT;

EID: 59849110084     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0645-7     Document Type: Article

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