The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 627-633

  Huang, Cheng Liang ^a   Chen, Jhih Yong ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A3. Polycrystalline deposition; B1. Oxides; B2. Dielectric materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DEPOSITION; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; MAGNETRONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SWITCHING CIRCUITS; TANTALUM; THIN FILMS; X RAY ANALYSIS;

A3. POLYCRYSTALLINE DEPOSITION; ATOMIC-FORCE MICROSCOPIES; B1. OXIDES; B2. DIELECTRIC MATERIALS; CAPACITANCE VOLTAGES; CAPACITOR STRUCTURES; CRYSTALLINITY; CURRENT VOLTAGES; DEPOSITION PARAMETERS; DEPOSITION PRESSURES; DEPOSITION TEMPERATURES; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTIES; LEAKAGE CURRENT DENSITIES; METAL - INSULATOR - SEMICONDUCTORS; P-TYPE SI; RF- MAGNETRON SPUTTERING; RF-POWER; SCANNING ELECTRONS; SEM; SUBSTRATE SURFACES; SUBSTRATE TEMPERATURES; X-RAY DIFFRACTIONS;

DIELECTRIC MATERIALS;

EID: 59749087972     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.083     Document Type: Article

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