Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 829-832

  Smirnov, A D ^a   Kalaev, V V ^a  

^a STR Group Ltd   (Russian Federation)

Author keywords

A1. Mass transfer; A2. Czochralski method; B2. Semiconducting silicon

Indexed keywords

CHEMICAL ENGINEERING; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; FURNACES; GROWTH (MATERIALS); IMPURITIES; MASS TRANSFER; NONMETALS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON COMPOUNDS;

A1. MASS TRANSFER; A2. CZOCHRALSKI METHOD; B2. SEMICONDUCTING SILICON; CHEMICAL PROCESS; COMPUTER ANALYSIS; CZ SILICONS; CZOCHRALSKI GROWTHS; DEPOSITION PROCESS; FREE SURFACES; FURNACE WALLS; HEAT INSULATIONS; IMPURITY TRANSPORTS; NUMERICAL MODELS; OXYGEN TRANSPORTS; SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 59749087122     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.127     Document Type: Article

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