Life testing of EMCCD gain characteristics

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 600, Issue 2, 2009, Pages 460-465

  Ingley, Richard ^a   Smith, David R ^a   Holland, Andrew D ^a  

^a BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

Ageing; CCD; EMCCD; Gaia RVS; Gain; Low light level imaging

Indexed keywords

AVALANCHES (SNOWSLIDES); CHARGE COUPLED DEVICES; DIGITAL CAMERAS; RADIATION DAMAGE; SNOW; SPECTROMETERS;

AGEING; CCD; EMCCD; GAIA RVS; GAIN; LOW-LIGHT LEVEL IMAGING;

ELECTRONIC EQUIPMENT TESTING;

EID: 59649120869     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.10.041     Document Type: Article

References (16)

1. D.R. Smith, D.M. Walton, R. Ingley, A.D. Holland, M. Cropper, P. Pool, in: Proceedings of SPIE, vol. 6276, 2006, p. 62760K.
2. P. Jerram, P. Pool, R. Bell, D. Burt, S. Bowring, S. Spencer, M. Hazelwood, I. Moody, N. Catlett, P. Heyes, in: Proceedings of SPIE, vol. 4306, 2001, p. 296.
3. Robbins M.S., and Hadwen B.J. IEEE Trans. Electron Devices ED-50 (2003) 1227
4. Madan S.K., Bhaumik B., and Vasi J.M. IEEE Trans. Electron Devices ED-30 (1983) 694
5. Plakhotnik T., Chennu A., and Zvyagin A.V. IEEE Trans. Electron Devices ED-53 (2006) 618
6. e2v technologies, The use of multiplication gain in L3Vision™ electron multiplying CCD sensors (low light technical note 2), Corporate Publication, 2003.
7. e2v technologies, Dark signal and clock-induced charge (low light level technical note 4), Corporate Publication, 2004.
8. Tubbs R.N., Baldwin J.E., Mackay C.D., and Cox G.C. Astron. Astrophys. 387 (2002) L21
9. e2v technologies, An overview of the ageing characteristics of L3Vision™ sensors (low light technical note 5), Corporate Publication, 2006.
10. K.K. Hamamatsu Photonics, EMCCD technical note, Corporate Publication, 2006.
11. M. Robbins, CCD Device, United States Patent Application Publication US2006/0231738 A1, 2006.
12. P.J. Pool, D.G. Morris, D.J. Burt, R.T. Bell, A.D. Holland, D.R. Smith, in: Proceedings of SPIE, vol. 5902, 2005, p. 59020A.
13. P. Jorden, K. Ball, R. Bell, D. Burt, N. Guyatt, K. Hadfield, P. Jerram, P. Pool, A. Pike, A. Holland, N. Murray, in: Proceedings of SPIE, vol. 6276, 2006, p. 627604.
14. Holland S.E., Groom D.E., Palaio N.P., Stover R.J., and Wei M. IEEE Trans. Electron Devices ED-50 (2003) 225
15. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley, New York
16. QImaging Corp., On-chip multiplication gain, Corporate Publication.