Influence of electrostatic charge on recombination lifetime and native oxide growth on HF-treated silicon wafers

Japanese Journal of Applied Physics

Volumn 48, Issue 1, 2009, Pages

  Araki, Nobue ^a  

^a Nissei Bldg   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC CHARGES; HF TREATMENTS; HYDROGEN-TERMINATED SILICON SURFACES; HYDROGEN-TERMINATED SURFACES; NATIVE OXIDE GROWTHS; ON WAFERS; P-TYPE SILICONS; RECOMBINATION LIFETIMES; SILICON SURFACES; SURFACE PASSIVATIONS; TIME-DEPENDENT CHANGES; WET-PROCESSING;

ELECTROSTATICS; GROWTH (MATERIALS); HYDROGEN; NONMETALS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE TREATMENT;

SILICON WAFERS;

EID: 59649090972     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.011201     Document Type: Article

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