Doping effect of M (M = Nb, Ce, Nd, Dy, Sm, Ag, and/or Na) on the growth of pulsed-laser deposited V2O5 thin films

Journal of Materials Processing Technology

Volumn 209, Issue 5, 2009, Pages 2421-2427

  Iida, Yusuke ^a   Kanno, Yoshinori ^b  

^a Sensing Laboratory Co Ltd   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Band gap; Doping elements; Electrochromic devices; Pulsed laser deposition; Thin films; V2O5

Indexed keywords

CERIUM; CERIUM COMPOUNDS; DOPING (ADDITIVES); ELECTROCHROMIC DEVICES; ELECTROCHROMISM; ELECTROOPTICAL DEVICES; ENERGY GAP; GROWTH (MATERIALS); LASERS; NEODYMIUM; NIOBIUM; OPTICAL DATA PROCESSING; PHOTOELECTRON SPECTROSCOPY; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; RARE EARTH ELEMENTS; SILVER; SODIUM; SOLIDS; TAPES; THIN FILMS; TRANSITION METALS; VANADIUM;

BAND GAP; DOPING EFFECTS; DOPING ELEMENTS; DOUBLE BONDS; OPTICAL MEASUREMENTS; OXIDATION STATE; PULSED-LASER DEPOSITION TECHNIQUES; RAMAN MEASUREMENTS; V2O5; X-RAY DIFFRACTION STUDIES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59549085776     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2008.05.033     Document Type: Article

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