Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors

Infrared Physics and Technology

Volumn 50, Issue 2-3, 2007, Pages 136-141

  Ting, D Z Y ^a   Chang, Y C ^b   Bandara, S V ^a   Hill, C J ^a   Gunapala, S D ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Discrete dopant effect; Infrared; QDIP; Quantum dot; Quantum well; QWIP

Indexed keywords

ASPECT RATIO; BAND STRUCTURE; DOPING (ADDITIVES); IMPURITIES; INFRARED DETECTORS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS;

DISCRETE DOPANT EFFECT; QDIP; QWIP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33947269930     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2006.10.031     Document Type: Article

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