Electron trap level of Cu-doped ZnO

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8799-8801

  Furukawa, Akio ^a   Ogasawara, Naoto ^a   Yokozawa, Ryoji ^a   Tokunaga, Takahiro ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Cu doped ZnO; Electron trap; High resistivity; Magnetron sputtering

Indexed keywords

CORUNDUM; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; HETEROJUNCTIONS; MAGNETRON SPUTTERING; MAGNETRONS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CONDUCTION BAND EDGES; CU CONTENTS; CU-DOPED ZNO; ELECTRON TRAP; ELECTRON TRAP LEVELS; HALL MEASUREMENTS; HIGH RESISTIVITY; HIGH TEMPERATURES; RF- MAGNETRON SPUTTERING; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENCES; TRAP ENERGY LEVELS;

COPPER;

EID: 59349109262     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8799     Document Type: Article

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