Annealing of ion irradiated high TC Josephson junctions studied by numerical simulations

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Sirena, M ^a   Matzen, S ^a   Bergeal, N ^a   Lesueur, J ^a   Faini, G ^b   Bernard, R ^c   Briatico, J ^c   Crt D G ^c  

^a Centre National de la Recherche Scientifique   (France)

^b UNIV PARIS SUD   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; IONS; OXYGEN;

ANNIHILATION MECHANISMS; DEFECTS DENSITIES; JOSEPHSON; JOSEPHSON JUNCTIONS; LOW TEMPERATURES; MEAN VALUES; MONTE CARLO CALCULATIONS; NUMERICAL SIMULATIONS; OXYGEN IONS; RANDOM WALKS; REPRODUCIBILITY; STOCHASTIC NATURES; TECHNOLOGICAL APPLICATIONS; TRANSITION TEMPERATURES;

TECHNETIUM;

EID: 59349108598     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068178     Document Type: Article

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