Photoresponse and saturation behavior of organic thin film transistors

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Wasapinyokul, Kamol ^a   Milne, W I ^a   Chu, D P ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EXCITONS; POLARONS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THIOPHENE; TRANSISTORS;

CURRENT INCREASE; ELECTRON-HOLE PAIRS; FIXED WAVELENGTHS; LIGHT INTENSITIES; MEAN FREE PATHS; NUMBER OF ELECTRONS; ORGANIC THIN FILM TRANSISTORS; OVERSATURATION; PEAK VALUES; PHOTO RESPONSE; POLARON DENSITIES; QUANTITATIVE ANALYSIS; SATURATION BEHAVIORS;

DRAIN CURRENT;

EID: 59349101571     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068359     Document Type: Article

References (36)

1. A. Tsumura, K. Koezuka, and T. Ando, Appl. Phys. Lett. 0003-6951 10.1063/1.97417 49, 1210 (1986).
2. T. Chuman, S. Ohta, S. Miyagushi, H. Satoh, T. Tanabe, Y. Okuda, and M. Tsuchida, SID Int. Symp. Digest Tech. Papers 0003-966X 10.1889/1.1811452 35, 45 (2004).
3. M. Kawasaki, S. Imazeki, M. Ando, Y. Sekiguchi, S. Hirota, S. Uemura, and T. Kamata, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2005.864371 53, 435 (2006).
4. J. A. Rogers, Z. Bao, K. Baldwin, A. Dodabalapur, B. Crone, V. R. Raju, V. Kuck, H. Katz, K. Amundson, J. Ewing, and P. Drzaic, Proc. Natl. Acad. Sci. U.S.A. 0027-8424 10.1073/pnas.091588098 98, 4835 (2001).
5. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelly, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 0003-6951 10.1063/1.1579554 82, 3964 (2003).
6. T. Someya, H. E. Katz, A. Gelperin, A. J. Lovinger, and A. Dodabalapur, Appl. Phys. Lett. 0003-6951 10.1063/1.1514826 81, 3079 (2002).
7. K. Nakamura, T. Hata, A. Yoshizawa, K. Obata, H. Endo, and K. Kudo, Appl. Phys. Lett. 0003-6951 10.1063/1.2347152 89, 103525 (2006).
8. H. Yamauchi, M. Iizuka, and K. Kudo, Jpn. J. Appl. Phys., Part 1 46, 2678 (2007). 0021-4922
9. T. P. Saragi, K. Onken, I. Suske, T. Fuhrmann-Lieker, and J. Salbeck, Opt. Mater. 0925-3467 10.1016/j.optmat.2006.07.001 29, 1332 (2007).
10. T. P. Saragi, R. Pudzich, T. Fuhrmann-Lieker, and J. Salbeck, Appl. Phys. Lett. 0003-6951 10.1063/1.1690110 84, 2334 (2004).
11. K. S. Narayan and N. Kumar, Appl. Phys. Lett. 0003-6951 10.1063/1.1404131 79, 1891 (2001).
12. M. J. Deen and M. H. Kazemeini, Proc. IEEE 0018-9219 10.1109/JPROC.2005. 850300 93, 1312 (2005).
13. N. Marjanovic, T. B. Singh, G. Dennler, S. Gunes, H. Neugebauer, N. S. Sariciftci, R. Schwodiauer, and S. Bauer, Org. Electron. 1566-1199 10.1016/j.orgel.2006.01.002 7, 188 (2006).
14. M. C. Hamilton and J. Kanicki, IEEE J. Sel. Top. Quantum Electron. 10, 840 (2004).
15. M. C. Hamilton, S. Martin, and J. Kanicki, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2004.829619 51, 877 (2004).
16. B. S. Ong, Y. Wu, P. Liu, and S. Gardner, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200401660 17, 1141 (2005).
17. Y. -Y. Noh, D. -Y. Kim, and K. Yase, J. Appl. Phys. 0021-8979 10.1063/1.2061892 98, 074505 (2005).
18. G. Horowitz, Adv. Mater. 10, 365 (1998). 0935-9648
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
20. L. -L. Chua, J. Zaumseil, J. -F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhous, and R. H. Friend, Nature (London) 0028-0836 10.1038/nature03376 434, 194 (2005).
21. M. Caironi, T. Agostinelli, D. Natali, M. Sampiero, R. Cugola, M. Catellani, and S. Luzzati, J. Appl. Phys. 0021-8979 10.1063/1.2756079 102, 024503 (2007).
22. S. A. Choulis, Y. Kim, J. Nelson, D. D. C. Bradley, M. Giles, M. Shkunov, and I. McCulloch, Appl. Phys. Lett. 0003-6951 10.1063/1.1805175 85, 3890 (2004).
23. O. Marinov, M. J. Deen, B. Iniguez, and B. Ong, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.2172929 24, 649 (2006).
24. G. Horowitz, J. Mater. Res. 0884-2914 10.1557/JMR.2004.0266 19, 1946 (2004).
25. C. Tanase, E. J. Meijer, P. W. M. Blom, and D. M. d. Leeuw, Org. Electron. 1566-1199 10.1016/S1566-1199(03)00006-5 4, 33 (2003).
26. E. J. Meijer, C. Detcheverry, P. J. Baesjou, E. v. Veenendaal, D. M. Leeuw, and T. M. Klapwijk, J. Appl. Phys. 0021-8979 10.1063/1.1559933 93, 4831 (2003).
27. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Calderon, Oxford, 1979).
28. R. A. Street, J. E. Northrup, and A. Salleo, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.165202 71, 165202 (2005).
29. F. C. Grozema, L. P. Candeias, M. Swart, P. T. v. Dujinen, J. Wildeman, G. Hadziioanou, L. D. A. Siebeles, and J. M. Warman, J. Chem. Phys. 0021-9606 10.1063/1.1522374 117, 11366 (2002).
30. K. D. Meisel, H. Vocks, and P. A. Bobbert, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.205206 71, 205206 (2005).
31. F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffeenach-Clur, O. Briot, and B. Gil, MRS Internet J. Nitride Semicond. Res. 3, 52 (1998).
32. Y. S. Tver'yanovich, D. S. Kim, and A. N. Rusnak, Glass Phys. Chem. 1087-6596 10.1007/s10720-005-0099-4 31, 563 (2005).
33. J. S. Kim, R. H. Friend, I. Grizzi, and J. H. Burroughes, Appl. Phys. Lett. 0003-6951 10.1063/1.1992658 87, 023506 (2005).
34. A. J. Lewis, A. Ruseckas, O. P. M. Gaudin, G. R. Webster, P. L. Burn, and I. D. W. Samuel, Org. Electron. 1566-1199 10.1016/j.orgel.2006.05.009 7, 452 (2006).
35. J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, J. H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. Denbaars, Appl. Phys. Lett. 0003-6951 10.1063/1.120191 71, 2572 (1997).
36. W. J. Rappel, L. F. Feiner, and M. F. H. Schuurmans, Phys. Rev. B 0163-1829 10.1103/PhysRevB.38.7874 38, 7874 (1988).