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Volumn 102, Issue 2, 2007, Pages

External quantum efficiency versus charge carriers mobility in polythiophene/methanofullerene based planar photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; FIELD EFFECT TRANSISTORS; OPTOELECTRONIC DEVICES; ORGANIC CONDUCTORS; PHOTOCURRENTS; QUANTUM EFFICIENCY;

EID: 34547573443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756079     Document Type: Article
Times cited : (28)

References (40)
  • 8
    • 33747364710 scopus 로고    scopus 로고
    • 0021-8979 10.1063/1.2226687
    • S. R. Scully and M. D. McGehee, J. Appl. Phys. 0021-8979 10.1063/1.2226687 100, 034907 (2006).
    • (2006) J. Appl. Phys. , vol.100 , pp. 034907
    • Scully, S.R.1    McGehee, M.D.2
  • 13
    • 33644634092 scopus 로고    scopus 로고
    • 1476-1122 10.1038/nmat1500
    • G. Li, V. Shrotriya, J. Huang, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Nat. Mater. 1476-1122 10.1038/nmat1500 4, 864 (2005); M. Reyes-Reyes, K. Kim, and D. Carroll, Appl. Phys. Lett. 0003-6951 10.1063/1.2006986 87, 083506 (2005).
    • (2005) Nat. Mater. , vol.4 , pp. 864
    • Li, G.1    Shrotriya, V.2    Huang, J.3    Yao, Y.4    Moriarty, T.5    Emery, K.6    Yang, Y.7
  • 14
    • 24344458529 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.2006986
    • G. Li, V. Shrotriya, J. Huang, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Nat. Mater. 1476-1122 10.1038/nmat1500 4, 864 (2005); M. Reyes-Reyes, K. Kim, and D. Carroll, Appl. Phys. Lett. 0003-6951 10.1063/1.2006986 87, 083506 (2005).
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 083506
    • Reyes-Reyes, M.1    Kim, K.2    Carroll, D.3
  • 24
    • 31044448403 scopus 로고    scopus 로고
    • 0009-2614
    • J. F. Chang, B. Sun, D. W. Breiby, M. N. Nielsen, T. I. Souelling, M. Giles, I. McCulloch, and H. Sirringhaus, Chem. Mater. 0897-4756 10.1021/cm049617w 16, 4772 (2004); U. Zhokhavets, T. Erb, G. Gobsh, M. Al-Ibrahim, and O. Ambacher, Chem. Phys. Lett. 418, 347 (2006). 0009-2614
    • (2006) Chem. Phys. Lett. , vol.418 , pp. 347
    • Zhokhavets, U.1    Erb, T.2    Gobsh, G.3    Al-Ibrahim, M.4    Ambacher, O.5
  • 35
    • 34547588462 scopus 로고    scopus 로고
    • For ambipolar FETs electrons mobility was extracted from transfer characteristic curves in the ohmic regime (Vdrain-source =+5 V and Vgate-source ranging from 0 V to +50 V), to avoid conduction and to allow a more precise measurement of electrons mobility.
    • For ambipolar FETs electrons mobility was extracted from transfer characteristic curves in the ohmic regime (Vdrain-source =+5 V and Vgate-source ranging from 0 V to +50 V), to avoid p conduction and to allow a more precise measurement of electrons mobility.
  • 36
    • 34547597568 scopus 로고    scopus 로고
    • In the blend any possible degradation, induced on the PCBM by the thermal treatment, is largely compensated by the formation of more extended percolative domains, so that the final effect is an enhancement of electrons mobility in the blend upon annealing.
    • In the blend any possible degradation, induced on the PCBM by the thermal treatment, is largely compensated by the formation of more extended percolative domains, so that the final effect is an enhancement of electrons mobility in the blend upon annealing.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.