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For ambipolar FETs electrons mobility was extracted from transfer characteristic curves in the ohmic regime (Vdrain-source =+5 V and Vgate-source ranging from 0 V to +50 V), to avoid conduction and to allow a more precise measurement of electrons mobility.
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In the blend any possible degradation, induced on the PCBM by the thermal treatment, is largely compensated by the formation of more extended percolative domains, so that the final effect is an enhancement of electrons mobility in the blend upon annealing.
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