GaN alternating current light-emitting device

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2077-2081

  Yen, Hsi Hsuan ^a,b   Yeh, Wen Yung ^b   Kuo, Hao Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS DIRECTION; OPTICAL CHARACTERISTICS; PLUG EFFICIENCY; WHEATSTONE BRIDGE (WB) CIRCUIT DESIGN;

CHIP SCALE PACKAGES; CURRENT DENSITY; ELECTRIC CURRENT CONTROL; GALLIUM NITRIDE; PRINTED CIRCUIT DESIGN;

LIGHT EMITTING DIODES;

EID: 34547219984     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674766     Document Type: Conference Paper

References (4)

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3. S. Murai, H. Masuda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 80(16), 2934 (2002).
4. Jin-Kuo Ho, Chamg-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, Appl. Phys. Lett. 74(9), 1275 (1999).