Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I-V-T measurements

Thin Solid Films

Volumn 515, Issue 15 SPEC. ISS., 2007, Pages 6233-6237

  Djebbour, Z ^a,d   Dubois, A Migan ^a   Darga, A ^a   Mencaraglia, D ^a   Bazin, C ^a   Connolly, J P ^b   Guillemoles, J F ^b   Lincot, D ^b   Canava, B ^c   Etcheberry, A ^c  

^a UNIV PARIS SUD   (France)

^b CNRS   (France)

^c UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

^d LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

CISS; Cliff type alignment; I V T measurements; Spike type alignment; Tunnelling enhanced recombination mechanisms

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODEPOSITION; ENERGY GAP; HETEROJUNCTIONS; OPTICAL PROPERTIES; SOLAR CELLS;

CLIFF TYPE ALIGNMENT; I V T MEASUREMENTS; SPIKE TYPE ALIGNMENT; TUNNELLING ENHANCED RECOMBINATION MECHANISMS;

COPPER COMPOUNDS;

EID: 34247360328     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.12.154     Document Type: Article

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