Dependence of the phototransport properties on the position of the Fermi level in polycrystalline CuInS2 films

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 876-885

  Lubianiker, Y ^a   Biton, G ^a   Balberg, I ^a   Walter, T ^b   Schock, H W ^b   Resto, O ^c   Weisz, S Z ^c  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; MOS DEVICES; POLYCRYSTALLINE MATERIALS; TRANSPORT PROPERTIES; X RAY SPECTROSCOPY;

BAND EDGE; COPPER INDIUM SULFIDE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FILM THICKNESS; LIGHT INTENSITY; PHOTOCARRIER GRATING; RECOMBINATION CENTERS; RECOMBINATION KINETICS;

COPPER COMPOUNDS;

EID: 0029777116     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360867     Document Type: Article

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