Effects of oxygen or nitrogen doping on the microstructures, bonding, electrical, thermal properties and phase change kinetics of GeSb9 films

Thin Solid Films

Volumn 517, Issue 8, 2009, Pages 2813-2819

  Fu, J H ^a   Wang, K Y ^a   Lee, K H ^a   Chou, L H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Crystallization; Electrical properties; Germanium antimonide; GeSb; Microstructures; Nitrogen doping; Oxygen doping; Phase change kinetics; Phase change memory; Phase change materials; Resistivity; Structural properties; Thermal properties; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; CHEMICAL PROPERTIES; CRYSTALLIZATION; CRYSTALLIZATION KINETICS; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON SPECTROSCOPY; GERMANIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LATTICE CONSTANTS; MASS SPECTROMETRY; MATERIALS PROPERTIES; MICROSTRUCTURE; NANOCRYSTALLINE ALLOYS; NITRIDES; NITROGEN; NONMETALS; OXYGEN; PHASE STABILITY; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PULSED LASER APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SPECTRUM ANALYSIS; THERMODYNAMIC PROPERTIES; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL PROPERTIES; GERMANIUM ANTIMONIDE; GESB; MICROSTRUCTURES; NITROGEN DOPING; OXYGEN DOPING; PHASE CHANGE KINETICS; PHASE-CHANGE MATERIALS; RESISTIVITY; STRUCTURAL PROPERTIES; THERMAL PROPERTIES;

PHASE CHANGE MEMORY;

EID: 59149093963     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.098     Document Type: Article

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