Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures

Semiconductors

Volumn 41, Issue 3, 2007, Pages 301-306

  Drapak, S I ^a   Kovalyuk, Z D ^a  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33947428409     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607030128     Document Type: Article

References (31)

1. S. I. Drapak and Z. D. Kovalyuk, Pis'ma Zh. Tekh. Fiz. 27 (18), 1 (2001)
2. [Tech. Phys. Lett. 27, 755 (2001).
3. V. A. Manasson, Z. D. Kovalyuk, S. I. Drapak, and V. N. Katerinchuk, Electron. Lett. 26, 664 (1990).
4. A. G. Kyazym-Zade, R. N. Mekhtieva, and A. A. Akhmedov, Fiz. Tekh. Poluprovodn. (Leningrad) 25, 1392 (1991)
5. [Sov. Phys. Semicond. 25, 840 (1991)].
6. S. I. Drapak, M. O. Vorobets, and Z. D. Kovalyuk, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 633 (2005)
7. [Semiconductors 39, 600 (2005)].
8. S. I. Drapak and M. O. Vorobets, Ukr. Fiz. Zh. 51 (1), 39 (2006).
9. Landolt-Bornstein. Numerical Data and Functional Relationships in Science and Technology. New Ser. Group III: Crystal and Solid State Physics, Ed. by O. Madelung (Springer, Berlin, 1983), Vol. 17.
10. A. Ya. Vul' and A. V. Sachenko, Fiz. Tekh. Poluprovodn. (Leningrad) 17, 1361 (1983)
11. [Sov. Phys. Semicond. 17, 865 (1983)].
12. Y. Ohtake, S. Cheisitsak, A. Yamada, and M. Konagai, Jpn. J. Appl. Phys. 37, 3220 (1998).
13. G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 953 (2002)
14. [Semiconductors 36, 889 (2002)].
15. H. Iwakuro, C. Tatsuyama, and S. Ichimura, Jpn. J. Appl. Phys. 21, 94 (1984).
16. V. P. Savchyn and V. B. Kytsai, Thin Solid Films 361-362, 123 (2000).
17. O. A. Balitskii, V. P. Savchyn, and V. O. Yukhymchuk, Semicond. Sci. Technol. 17, L1 (2002).
18. T. Hariu, S. Sasaki, H. Adachi, and Y. Shibata, Jpn. J. Appl. Phys. 16, 841 (1977).
19. O. A. Balitskii, Mater. Lett. 60, 594 (2006).
20. V. A. Manasson, A. I. Malik, and K. D. Tovstyuk, Fiz. Tekh. Poluprovodn. (Leningrad) 18, 2121 (1984)
21. [Sov. Phys. Semicond. 18, 1323 (1984)].
22. A. A. Lebedev, A. A. Lebedev, and V. D. Davydov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 113 (2000)
23. [Semiconductors 34, 115 (2000).
24. Yu. A. Gol'dberg, O. V. Ivanova, T. V. L'vova, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. (Leningrad) 18, 1472 (1984)
25. [Sov. Phys. Semicond. 18, 919 (1984)].
26. V. A. Manasson and A. I. Malik, Prib. Tekh. Éksp., No. 2, 190 (1981).
27. S. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981; Mir, Moscow, 1984), Vol. 2.
28. P. T. Oreshkin, Physics of Semiconductors and Insulators (Vysshaya Shkola, Moscow, 1977) [in Russian].
29. Yu. P. Gnatenko, Z. D. Kovalyuk, P. A. Skubenko, and Yu. I. Zhirko, Fiz. Tverd. Tela (Leningrad) 25, 445 (1983)
30. [Sov. Phys. Solid State 25, 251 (1983)].
31. Z. D. Kovalyuk, V. M. Katerynchuk, A. I. Savchuk, and O. M. Sydor, Mater. Sci. Eng. B 109, 252 (2004).