The formation of the thin-film solar cell absorber CuInS2 by annealing of Cu-In-S stacked elemental layer precursors - A comparison of selenisation and sulfurisation

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2136-2139

  Jost, S ^a   Schurr, R ^b   Holzing A ^b   Hergert, F ^b   Hock, R ^b   Purwins, M ^b   Palm, J ^a  

^a AVANCIS GMBH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Chalcopyrite; CuInS2; Real time X ray diffraction; Thin films

Indexed keywords

ANNEALING; COPPER; COPPER COMPOUNDS; DIFFRACTION; FORMING; PHOTOVOLTAIC CELLS; RIETVELD METHOD; RIETVELD REFINEMENT; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR ABSORBERS; SOLAR CELLS; SOLAR EQUIPMENT; SULFUR; THERMAL EVAPORATION; THIN FILM DEVICES; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ANNEALING PROCESS; CHALCOPYRITE; CRYSTALLINE PHASIS; CRYSTALLISATION; CU-IN-S; CUINS2; FORMATION REACTIONS; IN-SITU; INTERMETALLIC ALLOYS; PHASE EVOLUTIONS; REAL-TIME X-RAY DIFFRACTION; RIETVELD; SAMPLE TEMPERATURES; SIMILARITIES AND DIFFERENCES; STACKED ELEMENTAL LAYERS; THIN FILM SOLAR CELLS;

COPPER ALLOYS;

EID: 58949085486     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.076     Document Type: Article

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