Voltage control of in-plane magnetic anisotropy in ultrathin Fen-GaAs (001) Schottky junctions

Applied Physics Letters

Volumn 94, Issue 3, 2009, Pages

  Ohta, K ^a   Maruyama, T ^a   Nozaki, T ^a   Shiraishi, M ^a   Shinjo, T ^a   Suzuki, Y ^a   Ha, S S ^b   You, C Y ^b   Van Roy, W ^c  

^a OSAKA UNIVERSITY   (Japan)

^b Inha University   (South Korea)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GALLIUM ALLOYS; HYSTERESIS; LANDFORMS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETS; MODULATION; SEMICONDUCTING GALLIUM; VOLTAGE CONTROL; VOLTAGE REGULATORS; WETLANDS;

FE LAYERS; GAAS(001); IN-PLANE MAGNETIC ANISOTROPIES; IN-PLANE MAGNETIZATIONS; KERR ELLIPTICITIES; LOCK-IN; MAGNETIZATION SWITCHING; MODULATION TECHNIQUES; ROOM TEMPERATURES; SCHOTTKY JUNCTIONS; SINUSOIDAL VOLTAGES; ULTRA-LOW-POWER;

MAGNETIC ANISOTROPY;

EID: 58849123792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072344     Document Type: Article

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