Innovative applications of laser technology in photovoltaics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2991, Issue , 1997, Pages 119-128

  Pirozzi, Luisa ^a   Besi Vetrella, Ugo ^a   Salza, Enrico ^a  

^a ENEA C R CASACCIA   (Italy)

Author keywords

Doping; Grooving; Melting; Photovoltaics; Silicon; Texturing

Indexed keywords

APPLICATIONS; INDUSTRIAL PLANTS; LASER APPLICATIONS; PHOTOVOLTAIC EFFECTS; POLYSILICON; TEXTURING;

DOPING; GROOVING; MELTING; PHOTOVOLTAICS; SILICON;

LASERS;

EID: 58749087709     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273718     Document Type: Conference Paper

References (13)

1. 2 films", Helvetica Chimica Acta, 73, pp. 1788-1803, 1990.
2. M. Hirose, "Low temperature deposition and crystallization of silicon by means of laser techniques", Proc. of the First International Symposium on Semiconductor Processing and Characterization with Lasers - Applications in Photovoltaics, Material Science Forum Volumes 173-174, pp. 7-16, Trans Tech Publications, Stuttgart, 1995.
3. th European PVSEC, pp. 776-779, H. S. Stephens & Associates, Amsterdam - The Netherlands, 1994.
4. th European PVSEC, pp. 337-342, H. S. Stephens & Associates, Nice - France, 1995.
5. th European PVSEC, pp. 1025-1028, H. S. Stephens & Associates, Amsterdam - The Netherlands, 1994.
6. th European PVSEC, pp. 1029-1032, H. S. Stephens & Associates, Amsterdam -The Netherlands, 1994.
7. C. Cohen, J. Siejka, M. Berti, A. V. Drigo, G. G. Bentini, D. Pribat and E. Jannitti, "Pulsed laser irradiation of GaAs under oxygen and silane atmosphere: incorporation, losses, influence of native oxide", J. Appl. Phys., 55 (11), pp. 4081-4087, 1984.
8. T. F. Deutsch, D. J. Ehrlich, D. D. Rathman, D. J. Silversmith and R. M. Osgood, Jr., "Electrical properties of laser chemically doped silicon", Appl. Phys. Lett., 39 (10), pp.825-827, 1981.
9. G. G. Bentini, M. Bianconi, L. Correra, R. Nipoti and D. A. Patti, "Laser doping of silicon: role of the surface status in the incorporation mechanism", Applied Surface Science, 36, pp. 394-399, 1989.
10. M. O. Thompson, J. W. Mayer, A. G. Cullis, H. C. Webber, N. G. Chew, J. M. Poate and D. C. Jacobson, "Silicon melt, regrowth, and amorphization velocities during pulsed laser irradiation", Phys. Rev. Lett., 50 (12), pp. 896-899, 1983
11. G. G. Bentini, M. Bianconi, L. Correra, R. Nipoti, C. Summonte, C. Cohen and J. Siejka, "Pulsed laser irradiation under reactive atmosphere and subsequent incorporation in the molten layer", Proc. of the E-MRS Meeting, Vol. XV, pp. 251-260, Les Editions de Physique - Paris, Strasbourg - France, 1987.
12. T. F. Deutsch, J. J. C. Fan, G. W. Turner, R. L. Chapman, D. J. Ehrlrich and R. M. Osgood, Jr., "Efficient Si solar cells by laser photochemical doping", Appl. Phys. Lett., 38 (3), pp. 144146, 1981.
13. th European PVSEC, pp. 1578-1581, H. S. Stephens & Associates, Nice - France, 1995.