Polishing characteristics on silicon wafer using fixed nano-sized abrasive pad

Key Engineering Materials

Volumn 389-390, Issue , 2009, Pages 487-492

  Tso, Pei Lum ^a   Shih, Cheng Yi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Fixed abrasive pad; Hybrid process; Mechanical polishing

Indexed keywords

ABRASIVES; MORPHOLOGY; POLISHING; SURFACE ROUGHNESS;

FIXED ABRASIVES; GRAIN SIZE; HYBRID PROCESS; MATERIAL REMOVAL MECHANISMS; MECHANICAL FRACTURING; MECHANICAL POLISHING; POLISHING PROCESSS; SURFACE ROUGHNESS (RA);

SILICON WAFERS;

EID: 58149517826     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Article

References (3)

1. P. S. Sreejith, G. Udupa, Y.B.M. Noor and B.K.A. Ngoi, Recent Advances in Machining of Silicon Wafers for Semiconductor Applications, International Journal of Advanced Manufacturing Technology, 17 (2001), pp. 157-162.
2. I. Zarudi and B.S. Han, Deformation and Material Removal Rate in Polishing Silicon Wafers, Journal of Materials Processing Technology, 140 (2003), pp.641-645.
3. Y. Liu, K. Zhang, F. Wang and W. Di, Investigation on the Final Polishing Slurry and Technique of Silicon Substrate in ULSI, Microelectronic Engineering, 66 (2003), pp.438-444.