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Volumn 68, Issue 17, 1996, Pages 2418-2420

Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 20744456945     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116153     Document Type: Article
Times cited : (20)

References (13)
  • 3
    • 21544479474 scopus 로고    scopus 로고
    • A. Ishibashi and S. Itoh, in ''One-hour long room temperature CW operation of ZnMgSSe-based blue-green laser diodes,'' 7th IEEE Lasers and Electro-optics Society Annual Meeting, PD1.1, Boston, 1994.
    • A. Ishibashi and S. Itoh, in ''One-hour long room temperature CW operation of ZnMgSSe-based blue-green laser diodes,'' 7th IEEE Lasers and Electro-optics Society Annual Meeting, PD1.1, Boston, 1994.
  • 5
    • 21544484387 scopus 로고    scopus 로고
    • K. Nishimura, Y. Nagao, and K. Sakai, in ''Low pressure growth and nitrogen doping in metal organic vapor phase epitaxy of ZnSe,'' II-VI Conference, 1993.
    • K. Nishimura, Y. Nagao, and K. Sakai, in ''Low pressure growth and nitrogen doping in metal organic vapor phase epitaxy of ZnSe,'' II-VI Conference, 1993.
  • 12
    • 21544439367 scopus 로고    scopus 로고
    • G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy (Academic, New York, 1989).
    • G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy (Academic, New York, 1989).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.