Microwave characterization of semiconductors with a split-cylinder cavity

Measurement Science and Technology

Volumn 19, Issue 11, 2008, Pages

  Riddle, Bill ^a   Baker Jarvis, James ^a   Janezic, Michael ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Complex permittivity; Gallium arsenide; Microwave frequencies; Semiconductors; Silicon; Split cylinder cavity; Variable temperature

Indexed keywords

CYLINDERS (SHAPES); GALLIUM ARSENIDE; MICROWAVE FREQUENCIES; PERMITTIVITY; PERMITTIVITY MEASUREMENT; SEMICONDUCTOR MATERIALS; SILICON;

COMPLEX PERMITTIVITY; COMPLEX PERMITTIVITY MEASUREMENT; MICROWAVE CHARACTERIZATION; SPLIT-CYLINDER CAVITY; TEMPERATURE RANGE; VARIABLE TEMPERATURE;

SILICON WAFERS;

EID: 58149296319     PISSN: 09570233     EISSN: 13616501     Source Type: Journal    
DOI: 10.1088/0957-0233/19/11/115701     Document Type: Article

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