Preparation of phosphorus doped hydrogenated microcrystalline silicon thin films by inductively coupled plasma chemical vapor deposition and their characteristics for solar cell applications

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 10, 2008, Pages 5521-5526

  Jeong, Chaehwan ^a   Boo, Seongjae ^a   Kim, Tae Won ^a   Choi, Bum Ho ^a   Kim, Ho Sung ^a   Chang, Duck Rye ^a   Lee, Jong Ho ^a   Kamisako, Koichi ^b  

^a Korea Institute of Industrial Technology   (South Korea)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

ICP CVD; Microcrystalline Si; Phosphorus doped; Solar cell; Thin films

Indexed keywords

AMORPHOUS NETWORKS; BANDGAP; DARK CONDUCTIVITIES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTIES; GAS RATIOS; HYDROGENATED MICROCRYSTALLINE SILICONS; ICP POWERS; ICP SOURCES; ICP-CVD; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITIONS; MAXIMUM VALUES; MICROCRYSTALLINE SI; OPTICAL-; PHOSPHORUS DOPED; SILANE CONCENTRATIONS; X-RAY DIFFRACTIONS;

ACTIVATION ENERGY; AMORPHOUS FILMS; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICROCRYSTALLINE SILICON; NONMETALS; OPTICAL CONDUCTIVITY; OPTICAL FILMS; OPTICAL PROPERTIES; PHOSPHORUS; PHOTORESISTS; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; THIN FILMS; VAPORS;

FILM PREPARATION;

EID: 58149269900     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.1265     Document Type: Conference Paper

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