Nanostructures and luminescence properties of porous ZnO thin films prepared by sol-gel process

Current Applied Physics

Volumn 9, Issue 3, 2009, Pages 643-646

  Kim, Nam Jung ^a   Choi, Seung li ^b   Lee, Hee Jung ^b   Kim, Kwang Joo ^b  

^a UNIVERSITY OF MISSOURI   (United States)

^b Konkuk University   (South Korea)

Author keywords

Lamellar structure; Photoluminescence; Porous thin films; Zinc oxide

Indexed keywords

AMMONIUM COMPOUNDS; COLLOIDS; GELATION; GELS; LIGHT; LIGHT EMISSION; LUMINESCENCE; METALLIC FILMS; NANOSTRUCTURED MATERIALS; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; OXIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLIDS; SOLS; SURFACE ACTIVE AGENTS; SURFACE DEFECTS; THIN FILMS; ZINC; ZINC OXIDE;

AMMONIUM BROMIDES; DOPING LEVELS; EMISSION INTENSITIES; GREEN EMISSIONS; LUMINESCENCE PROPERTIES; ORGANIC TEMPLATES; PHOTOLUMINESCENCE MEASUREMENTS; PORE ARRAYS; POROUS THIN FILMS; PRECURSOR SOLUTIONS; SENSOR APPLICATIONS; SOLID SUBSTRATES; SUPPRESSION EFFECTS; X-RAY DIFFRACTIONS; ZNO FILMS; ZNO THIN FILMS;

LAMELLAR STRUCTURES;

EID: 58149267796     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.04.015     Document Type: Article

References (16)

1. Cho S., Ma J., Kim Y., Sun Y., Wong G.K.L., and Ketterson J.B. Appl. Phys. Lett. 75 (1999) 2761
2. Guo L., Yang S., Yang C., Yu P., Wang J., Ge W., and Wong G.K.L. Appl. Phys. Lett. 76 (2000) 2901
3. Liu X., Wu X., Cao H., and Chang R.P.H. J. Appl. Phys. 95 (2004) 3141
4. Djurisić A.B., Choy W.C.H., Roy V.A.L., Leung Y.H., Kwong C.Y., Cheah K.W., Rao T.K.G., Chan W.K., Lui H.F., and Surya C. Adv. Funct. Mater. 14 (2004) 856
5. Sberveglieri G., Groppelli S., Nelli P., Tintinelli A., and Giunta G. Sensor. Actuator. B 25 (1995) 88
6. Rodriguez J.A., Jirsak T., Dvorak J., Sambasivan S., and Fischer D. J. Phys. Chem. B 104 (2000) 319
7. Vanheusden K., Seager C.H., Warren W.L., Tallant D.R., and Voigt J.A. Appl. Phys. Lett. 68 (1996) 403
8. Vanheusden K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., and Gnade B.E. J. Appl. Phys. 79 (1996) 7983
9. Van de Walle C.G. Phys. Rev. Lett. 85 (2000) 1012
10. Ohashi N., Ishigaki T., Okada N., Sekiguchi T., Sakaguchi I., and Haneda H. Appl. Phys. Lett. 80 (2002) 2869
11. Wang D., Seo H.W., Tin C.-C., Bozack M.J., Williams J.R., Park M., Sathitsuksanoh N., Cheng A., and Tzeng Y.H. J. Appl. Phys. 99 (2006) 113509
12. Li D., Leung H., Djurisić A.B., Liu Z.T., Xie M.H., Shi S.L., Xu S.J., and Chan W.K. Appl. Phys. Lett. 85 (2004) 1601
13. Choi K.-S., Lichtenegger H.C., Stucky G.D., and McFarland E.W. J. Am. Chem. Soc. 124 (2002) 12402
14. JCPDS, International Centre for Diffraction Data, 48-2454 (1997).
15. Pan Z.W., Dai Z.R., and Wang Z.L. Science 209 (2001) 1947
16. Gao P.X., Lao C.S., Hughes W.L., and Wang Z.L. Chem. Phys. Lett. 408 (2005) 174