Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

Semiconductors

Volumn 36, Issue 5, 2002, Pages 505-510

  Shashkin, V I ^a   Murel, A V ^a   Daniltsev, V M ^a   Khrykin, O I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036588653     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1478540     Document Type: Article

References (15)

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