Dynamic admittance of carbon nanotube-based molecular electronic devices and their equivalent electric circuit

Nanotechnology

Volumn 19, Issue 49, 2008, Pages

  Yam, ChiYung ^a   Mo, Yan ^a   Wang, Fan ^a   Li, Xiaobo ^a   Chen, GuanHua ^a   Zheng, Xiao ^a,b   Matsuda, Yuki ^c   Tahir Kheli, Jamil ^c   Goddard III, William A ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RESPONSE; ELECTRIC CONDUCTANCE; ELECTRIC LINES; ELECTRIC NETWORK ANALYSIS; MOLECULAR ELECTRONICS; NANOCOMPOSITES; NANOTUBES; NETWORKS (CIRCUITS); PORT TERMINALS; QUANTUM THEORY; TERMINALS (ELECTRIC); THERMOELECTRIC EQUIPMENT;

CARBON NANOTUBE DEVICES; ELECTRIC CIRCUITS; ELECTRIC RESPONSES; ELECTRICAL RESPONSES; EQUIVALENT ELECTRIC CIRCUITS; FEMTO SECONDS; MOLECULAR DEVICES; MOLECULAR ELECTRONIC DEVICES; QUANTUM MECHANICS; SITE MODELS; SWITCHING TIMES;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; MOLECULAR ELECTRONICS; MOLECULAR MODEL; NANOANALYSIS; NANODEVICE; PRIORITY JOURNAL; QUANTUM MECHANICS; TIME;

EID: 58149248051     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/49/495203     Document Type: Article

References (38)

1. Aviram A and Ratner M A 1974 Chem. Phys. Lett. 29 277
2. Datta S 1995 Electron Transport in Mesoscopic Systems (Cambridge: Cambridge University Press)
3. Taylor J, Guo H and Wang J 2001 Phys. Rev. B 63 245407
4. Xiang J, Lu W, Hu Y, Wu Y, Yan H and Lieber C M 2006 Nature 441 489
5. Plombon J J, O'Brien K P, Gstrein F, Dubin V M and Jiao Y 2007 Appl. Phys. Lett. 90 063106
6. Gomet-Rojas L, Bhattacharyya S, Mendoza E, Cox D C, Rosolen J M and Silva S R P 2007 Nano Lett. 7 2672
7. Kim Y H, Tahir-Kheli J, Schultz P A and Goddard W A III 2006 Phys. Rev. B 73 235419
8. Javey A, Guo J, Paulsson M, Wang Q, Mann D, Lundstrom M and Dai H J 2004 Phys. Rev. Lett. 92 106804
9. Burke P J 2003 IEEE Trans. Nanotechnol. 2 55
10. Li S, Yu Z, Yen S-F, Tang W C and Burke P J 2004 Nano Lett. 4 753
11. Raham A, Guo J, Datta S and Lundstrom M S 2003 IEEE Trans. Electron Devices 50 1853
12. Büttiker M, Thomas H and Pretre A 1993 Phys. Lett. A 180 364
13. Blanter Y M, Hekking F W J and Büttiker M 1998 Phys. Rev. Lett. 81 1925
14. Burke K, Car R and Gebauer R 2005 Phys. Rev. Lett. 94 146803
15. Ke S-H, Baranger H U and Yang W 2004 Phys. Rev. B 70 085410
16. Yoon Y-G, Delaney P and Louie S G 2002 Phys. Rev. B 66 073407
17. Di Carlo A, Gheorghe M, Lugli P, Sternberg M, Seifert G and Frauenheim T 2002 Physica B 314 86
18. Zheng X, Chen G H, Li Z B, Deng S Z and Xu N S 2004 Phys. Rev. Lett. 92 106803
19. Zheng X, Wang F, Yam C Y, Mo Y and Chen G H 2007 Phys. Rev. B 75 195127
20. Maciejko J, Wang J and Guo H 2006 Phys. Rev. B 74 085324
21. Jauho A-P, Wingreen N S and Meir Y 1994 Phys. Rev. B 50 5528
22. Li X Q and Yan Y J 2007 Phys. Rev. B 75 075114
23. Kurth S, Stefanucci G, Almbladh C O, Rubio A and Gross E K U 2005 Phys. Rev. B 72 035308
24. López Sancho M P, López Sancho J M and Rubio J 1985 J. Phys. F: Met. Phys. 15 851
25. Adams J 1989 Appl. Math. Comput. 34 113
26. Büttiker M, Pretre A and Thomas H 1993 Phys. Rev. Lett. 70 4114
27. Büttiker M, Pretre A and Thomas H 1993 Phys. Rev. Lett. 71 465
28. Wang B, Wang J and Guo H 1999 Phys. Rev. Lett. 82 398
29. Fu Y and Dudley S C 1993 Phys. Rev. Lett. 70 65
30. Fu Y and Dudley S C 1993 Phys. Rev. Lett. 71 466
31. Landauer R 1957 IBM J. Res. Dev. 1 223
32. Landauer R 1970 Phil. Mag. 21 863
33. Büttiker M and Imry Y 1985 J. Phys. C: Solid State Phys. 18 L467
34. Büttiker M, Imry Y, Landauer R and Pinhas S 1985 Phys. Rev. B 31 6207
35. Cunibert G, Sassetti M and Kramer B 1998 Phys. Rev. B 57 1515
36. Gabelli J, Feve G, Berroir J-M, Placais B, Cavanna A, Etienne B, Jin Y and Glattli D C 2006 Science 313 499
37. Chen Y, Ouyang Y, Guo J and Wu T X 2006 Appl. Phys. Lett. 89 203122
38. Wang J, Wang B G and Guo H 2007 Phys. Rev. B 75 155336