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Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

Analytical theory for favorable defects in tunnel diodes

(4) Jandieri, K a Baranovskii, S D a Stolz, W a Gebhard, F a

a PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRON ENERGY LEVELS; ENERGY GAP; GALLIUM ALLOYS; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SOLAR ENERGY; TRANSFER MATRIX METHOD; TUNNEL DIODES; TUNNELS;

ANALYTICAL THEORIES; BAND GAPS; CURRENT/VOLTAGE CHARACTERISTICS; DEVICE PROPERTIES; ELECTRICAL CURRENTS; ENERGY LEVELS; LOW VOLTAGES; MULTILAYERED; NUMERICAL CALCULATIONS; TRANSFER MATRIX TECHNIQUES;

SEMICONDUCTOR DIODES;

EID: 58149242233 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2996109 Document Type: Article

Times cited : (3)

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