Resonant tunneling as a dominant transport mechanism in n-GaAsp-GaAs tunnel diodes

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Jandieri, K ^a   Baranovskii, S D ^a   Rubel, O ^a   Stolz, W ^a   Gebhard, F ^a   Guter, W ^b   Hermle, M ^b   Bett, A W ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; SEMICONDUCTING GALLIUM; TUNNEL DIODES;

CURRENT VOLTAGE (I V) CHARACTERISTICS; DOMINANT TRANSPORT;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 45749090098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936932     Document Type: Article

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